XP3C023AMT

XP3C023AMT
Attribute
Description
Manufacturer Part Number
XP3C023AMT
Manufacturer
Description
MOSFET N/P-CH 30V 12A PMPAK
Note : GST will not be applied to orders shipping outside of India

Stock:
3000

Distributor: 122

Lead Time: Not specified

Quantity Unit Price Ext. Price
15000 ₹ 18.33 ₹ 2,74,950.00
9000 ₹ 18.70 ₹ 1,68,300.00
6000 ₹ 19.51 ₹ 1,17,060.00
3000 ₹ 19.86 ₹ 59,580.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line XP3C023A
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 12A (Ta), 10A (Ta)
Max On-State Resistance 10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V
Max Threshold Gate Voltage 2.5V @ 1mA
Max Gate Charge at Vgs 19.2nC @ 4.5V, 21.6nC @ 4.5V
Max Input Cap at Vds 2320pF @ 15V, 2480pF @ 15V
Maximum Power Handling 3.57W (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerLDFN
Vendor Package Type PMPAK® 5 x 6

Description

Provided in a setup characterized as N and P-Channel. Supports a continuous drain current (Id) of 12A (Ta), 10A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Guarantees maximum 19.2nC @ 4.5V, 21.6nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 19.2nC @ 4.5V, 21.6nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2320pF @ 15V, 2480pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 2320pF @ 15V, 2480pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerLDFN providing mechanical and thermal shielding. Enclosure type PMPAK® 5 x 6 ensuring device integrity. Peak power 3.57W (Ta) for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 19.2nC @ 4.5V, 21.6nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V for MOSFET criteria. Product or component classification series XP3C023A. Manufacturer package type PMPAK® 5 x 6 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold level.

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