SI7288DP-T1-GE3

SI7288DP-T1-GE3
Attribute
Description
Manufacturer Part Number
SI7288DP-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 40V 20A PPAK SO8
Note : GST will not be applied to orders shipping outside of India

Stock:
240

Distributor: 118

Lead Time: Not specified

Quantity Unit Price Ext. Price
197 ₹ 72.77 ₹ 14,335.69
50 ₹ 90.96 ₹ 4,548.00
1 ₹ 181.92 ₹ 181.92

Stock:
6000

Distributor: 157

Lead Time: Not specified


Quantity Unit Price Ext. Price
6000 ₹ 89.00 ₹ 5,34,000.00
3000 ₹ 96.12 ₹ 2,88,360.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 40V
Continuous Drain Current at 25C 20A
Max On-State Resistance 19mOhm @ 10A, 10V
Max Threshold Gate Voltage 2.8V @ 250µA
Max Gate Charge at Vgs 15nC @ 10V
Max Input Cap at Vds 565pF @ 20V
Maximum Power Handling 15.6W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style PowerPAK® SO-8 Dual
Vendor Package Type PowerPAK® SO-8 Dual

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 20A at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Guarantees maximum 15nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 15nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 565pF @ 20V at Vds for safeguarding the device. The input capacitance is rated at 565pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case PowerPAK® SO-8 Dual providing mechanical and thermal shielding. Enclosure type PowerPAK® SO-8 Dual ensuring device integrity. Peak power 15.6W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 15nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 19mOhm @ 10A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type PowerPAK® SO-8 Dual for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 2.8V @ 250µA for MOSFET threshold level.

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