SI6924AEDQ-T1-E3
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) Common Drain | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 28V | |
| Continuous Drain Current at 25C | 4.1A | |
| Max On-State Resistance | 33mOhm @ 4.6A, 4.5V | |
| Max Threshold Gate Voltage | 1.5V @ 250µA | |
| Max Gate Charge at Vgs | 10nC @ 4.5V | |
| Max Input Cap at Vds | - | |
| Maximum Power Handling | 1W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-TSSOP (0.173", 4.40mm Width) | |
| Vendor Package Type | 8-TSSOP |
Description
Provided in a setup characterized as 2 N-Channel (Dual) Common Drain. Supports a continuous drain current (Id) of 4.1A at 25°C. Supports Vdss drain-to-source voltage rated at 28V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 10nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 10nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-TSSOP (0.173", 4.40mm Width) providing mechanical and thermal shielding. Enclosure type 8-TSSOP ensuring device integrity. Peak power 1W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 10nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 33mOhm @ 4.6A, 4.5V for MOSFET criteria. Manufacturer package type 8-TSSOP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold level.
