SI4202DY-T1-GE3

SI4202DY-T1-GE3
Attribute
Description
Manufacturer Part Number
SI4202DY-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 30V 12.1A 8SOIC
Note : GST will not be applied to orders shipping outside of India

Stock:
20000

Distributor: 118

Lead Time: Not specified

Quantity Unit Price Ext. Price
3590 ₹ 35.51 ₹ 1,27,480.90
1685 ₹ 37.20 ₹ 62,682.00
1 ₹ 101.46 ₹ 101.46

Stock:
7500

Distributor: 113

Lead Time: Not specified


Quantity Unit Price Ext. Price
2500 ₹ 54.20 ₹ 1,35,500.00
5000 ₹ 53.58 ₹ 2,67,900.00
7500 ₹ 52.33 ₹ 3,92,475.00

Stock:
5000

Distributor: 157

Lead Time: Not specified


Quantity Unit Price Ext. Price
5000 ₹ 62.99 ₹ 3,14,950.00
2500 ₹ 68.24 ₹ 1,70,600.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 12.1A
Max On-State Resistance 14mOhm @ 8A, 10V
Max Threshold Gate Voltage 2.5V @ 250µA
Max Gate Charge at Vgs 17nC @ 10V
Max Input Cap at Vds 710pF @ 15V
Maximum Power Handling 3.7W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOIC

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 12.1A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 17nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 17nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 710pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 710pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 3.7W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 17nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 14mOhm @ 8A, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type 8-SOIC for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.

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