SI1917EDH-T1-E3

SI1917EDH-T1-E3
Attribute
Description
Manufacturer Part Number
SI1917EDH-T1-E3
Manufacturer
Description
MOSFET 2P-CH 12V 1A SC70-6
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 P-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 12V
Continuous Drain Current at 25C 1A
Max On-State Resistance 370mOhm @ 1A, 4.5V
Max Threshold Gate Voltage 450mV @ 100µA (Min)
Max Gate Charge at Vgs 2nC @ 4.5V
Max Input Cap at Vds -
Maximum Power Handling 570mW
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363
Vendor Package Type SC-70-6

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 P-Channel (Dual). Supports a continuous drain current (Id) of 1A at 25°C. Supports Vdss drain-to-source voltage rated at 12V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 2nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 2nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 6-TSSOP, SC-88, SOT-363 providing mechanical and thermal shielding. Enclosure type SC-70-6 ensuring device integrity. Peak power 570mW for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 2nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 370mOhm @ 1A, 4.5V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type SC-70-6 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 450mV @ 100µA (Min) for MOSFET threshold level.

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