SI1029X-T1-GE3

SI1029X-T1-GE3
Attribute
Description
Manufacturer Part Number
SI1029X-T1-GE3
Manufacturer
Description
MOSFET N/P-CH 60V 0.305A SC89
Note : GST will not be applied to orders shipping outside of India

Stock:
60000

Distributor: 113

Lead Time: Not specified

Quantity Unit Price Ext. Price
3000 ₹ 19.69 ₹ 59,070.00
9000 ₹ 19.31 ₹ 1,73,790.00
12000 ₹ 19.31 ₹ 2,31,720.00
30000 ₹ 18.94 ₹ 5,68,200.00
45000 ₹ 18.69 ₹ 8,41,050.00

Stock:
276000

Distributor: 157

Lead Time: Not specified


Quantity Unit Price Ext. Price
276000 ₹ 21.64 ₹ 59,72,640.00
3000 ₹ 23.43 ₹ 70,290.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 60V
Continuous Drain Current at 25C 305mA, 190mA
Max On-State Resistance 1.4Ohm @ 500mA, 10V
Max Threshold Gate Voltage 2.5V @ 250µA
Max Gate Charge at Vgs 750nC @ 4.5V, 1700nC @ 4.5V
Max Input Cap at Vds 30pF @ 25V, 23pF @ 25V
Maximum Power Handling 250mW
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style SOT-563, SOT-666
Vendor Package Type SC-89 (SOT-563F)

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as N and P-Channel. Supports a continuous drain current (Id) of 305mA, 190mA at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 750nC @ 4.5V, 1700nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 750nC @ 4.5V, 1700nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 30pF @ 25V, 23pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 30pF @ 25V, 23pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case SOT-563, SOT-666 providing mechanical and thermal shielding. Enclosure type SC-89 (SOT-563F) ensuring device integrity. Peak power 250mW for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 750nC @ 4.5V, 1700nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.4Ohm @ 500mA, 10V for MOSFET criteria. Product or component classification series TrenchFET®. Manufacturer package type SC-89 (SOT-563F) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.

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