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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Half Bridge) | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 40A | |
| Max On-State Resistance | 3.4 Ohm @ 4.5V | |
| Max Threshold Gate Voltage | 2.1V @ 250µA | |
| Gate Charge at Vgs | 19nC @ 4.5V | |
| Input Cap at Vds | 3190pF @ 15V | |
| Maximum Power Handling | 12W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-LDFN Exposed Pad |
Description
Measures resistance at forward current 2 N-Channel (Half Bridge) for LED or diode evaluation. Supports a continuous drain current (Id) of 40A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as 2 N-Channel (Half Bridge). Upholds 19nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 3190pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-LDFN Exposed Pad providing mechanical and thermal shielding. Peak power 12W for device protection. Peak Rds(on) at Id 19nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.4 Ohm @ 4.5V for MOSFET criteria. Peak Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold level.
