VNH7013XPTR-E

VNH7013XPTR-E

Data Sheet

Attribute
Description
Manufacturer Part Number
VNH7013XPTR-E
Manufacturer
Description
MOSFET 4N-CH 40A 36PWRSSO
Note : GST will not be applied to orders shipping outside of India

Stock:
1

Distributor: 142

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 482.38 ₹ 482.38
10 ₹ 433.43 ₹ 4,334.30
25 ₹ 410.29 ₹ 10,257.25
100 ₹ 355.11 ₹ 35,511.00
250 ₹ 336.42 ₹ 84,105.00
500 ₹ 302.60 ₹ 1,51,300.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 4 N-Channel (Half Bridge)
Transistor Special Function -
Drain-Source Breakdown Volts 36V
Continuous Drain Current at 25C 40A
Max On-State Resistance 7.3mOhm @ 5A, 10V, 5.7mOhm @ 5A, 10V
Max Threshold Gate Voltage 4V @ 1mA
Max Gate Charge at Vgs 23nC @ 10V, 36nC @ 10V
Max Input Cap at Vds 1250pF @ 25V, 1836pF @ 25V
Maximum Power Handling -
Ambient Temp Range 175°C (TJ)
Quality Grade Level Automotive
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 36-PowerBFSOP (0.295", 7.50mm Width)
Vendor Package Type PowerSSO-36 TP

Description

Provided in a setup characterized as 4 N-Channel (Half Bridge). Supports a continuous drain current (Id) of 40A at 25°C. Supports Vdss drain-to-source voltage rated at 36V. Guarantees maximum 23nC @ 10V, 36nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 23nC @ 10V, 36nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 1250pF @ 25V, 1836pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 1250pF @ 25V, 1836pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 36-PowerBFSOP (0.295", 7.50mm Width) providing mechanical and thermal shielding. Enclosure type PowerSSO-36 TP ensuring device integrity. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 23nC @ 10V, 36nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 7.3mOhm @ 5A, 10V, 5.7mOhm @ 5A, 10V for MOSFET criteria. Manufacturer package type PowerSSO-36 TP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.