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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | SuperMESH3™ | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 450V | |
| Continuous Drain Current at 25C | 500mA | |
| Max On-State Resistance | 3.8Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 50µA | |
| Max Gate Charge at Vgs | 6nC @ 10V | |
| Max Input Cap at Vds | 150pF @ 25V | |
| Maximum Power Handling | 1.3W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 500mA at 25°C. Supports Vdss drain-to-source voltage rated at 450V. Guarantees maximum 6nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 6nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 150pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 150pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOIC ensuring device integrity. Peak power 1.3W for device protection. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 6nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.8Ohm @ 500mA, 10V for MOSFET criteria. Product or component classification series SuperMESH3™. Manufacturer package type 8-SOIC for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 4.5V @ 50µA for MOSFET threshold level.
