CPH3340-TL-E

CPH3340-TL-E

Data Sheet

Attribute
Description
Manufacturer Part Number
CPH3340-TL-E
Description
MOSFET P-CH 20V 5A CPH3
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Stock:
37

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 16.04 ₹ 16,04,000.00
10000 ₹ 19.13 ₹ 1,91,300.00
1000 ₹ 21.47 ₹ 21,470.00
500 ₹ 23.27 ₹ 11,635.00
100 ₹ 25.86 ₹ 2,586.00

Stock:
37

Distributor: 135

Lead Time: Not specified


Quantity Unit Price Ext. Price
100000 ₹ 16.04 ₹ 16,04,000.00
10000 ₹ 19.13 ₹ 1,91,300.00
1000 ₹ 21.47 ₹ 21,470.00
500 ₹ 23.27 ₹ 11,635.00
100 ₹ 25.86 ₹ 2,586.00

Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET P-Channel, Metal Oxide
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 5A (Ta)
Max On-State Resistance 45 mOhm @ 2.5A, 4V
Max Threshold Gate Voltage -
Gate Charge at Vgs 16nC @ 4V
Input Cap at Vds 1875pF @ 10V
Maximum Power Handling 1.2W
Attachment Mounting Style Surface Mount
Component Housing Style SC-96

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 5A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 16nC @ 4V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1875pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SC-96 providing mechanical and thermal shielding. Peak power 1.2W for device protection. Peak Rds(on) at Id 16nC @ 4V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 45 mOhm @ 2.5A, 4V for MOSFET criteria.

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