2SJ683-TL-E
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 65A (Ta) | |
| Max On-State Resistance | 10.5 mOhm @ 33A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 290nC @ 10V | |
| Input Cap at Vds | 15500pF @ 20V | |
| Maximum Power Handling | 50W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-SMD, Flat Leads |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 65A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 290nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 15500pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 3-SMD, Flat Leads providing mechanical and thermal shielding. Peak power 50W for device protection. Peak Rds(on) at Id 290nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 10.5 mOhm @ 33A, 10V for MOSFET criteria.
