Stock: 1080
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1080 | ₹ 257.58 | ₹ 2,78,186.40 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 4 N-Channel (Full Bridge) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 5A | |
| Max On-State Resistance | 300mOhm @ 3A, 4V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 320pF @ 10V | |
| Maximum Power Handling | 4.8W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 15-SIP Exposed Tab, Formed Leads | |
| Vendor Package Type | 15-ZIP |
Description
Provided in a setup characterized as 4 N-Channel (Full Bridge). Supports a continuous drain current (Id) of 5A at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Provides FET characteristics categorized as Logic Level Gate. The highest input capacitance is 320pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 320pF @ 10V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 15-SIP Exposed Tab, Formed Leads providing mechanical and thermal shielding. Enclosure type 15-ZIP ensuring device integrity. Peak power 4.8W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 300mOhm @ 3A, 4V for MOSFET criteria. Manufacturer package type 15-ZIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.
