Description

Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 9A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Guarantees maximum 12nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 12nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1400pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 1400pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SMD, Flat Leads providing mechanical and thermal shielding. Enclosure type TSMT8 ensuring device integrity. Peak power 1.5W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 12nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 17mOhm @ 7A, 4.5V for MOSFET criteria. Manufacturer package type TSMT8 for component choice. Peak Vgs(th) at Id 1.5V @ 1mA for MOSFET threshold level.