Description

Provided in a setup characterized as 2 P-Channel (Dual). Supports a continuous drain current (Id) of 2.9A at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 8.6nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 8.6nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 750pF @ 16V at Vds for safeguarding the device. The input capacitance is rated at 750pF @ 16V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SMD, Flat Leads providing mechanical and thermal shielding. Enclosure type ChipFET™ ensuring device integrity. Peak power 1.1W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 8.6nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 80mOhm @ 2.9A, 4.5V for MOSFET criteria. Manufacturer package type ChipFET™ for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold level.