Description

Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 8.2A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 24nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 24nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1635pF @ 30V at Vds for safeguarding the device. The input capacitance is rated at 1635pF @ 30V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerWDFN providing mechanical and thermal shielding. Enclosure type 8-Power33 (3x3) ensuring device integrity. Peak power 1.9W (Ta), 16W (Tc) for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 24nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 17mOhm @ 8.2A, 10V for MOSFET criteria. Product or component classification series PowerTrench®. Manufacturer package type 8-Power33 (3x3) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.