MTP50P03HDLG
Data Sheet
Stock: 500
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 500 | ₹ 44.99 | ₹ 22,495.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 50A (Tc) | |
| Max On-State Resistance | 25 mOhm @ 25A, 5V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Gate Charge at Vgs | 100nC @ 5V | |
| Input Cap at Vds | 4900pF @ 25V | |
| Maximum Power Handling | 125W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 50A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 100nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4900pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 125W for device protection. Peak Rds(on) at Id 100nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 25 mOhm @ 25A, 5V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.
