Stock: 120
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 30 | ₹ 715.24 | ₹ 21,457.20 |
| 9 | ₹ 773.23 | ₹ 6,959.07 |
| 1 | ₹ 1,159.85 | ₹ 1,159.85 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | FDmesh™ II | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 600 V | |
| Continuous Drain Current at 25C | 35A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 88mOhm @ 17.5A, 10V | |
| Max Threshold Gate Voltage | 5V @ 250µA | |
| Max Gate Charge at Vgs | 120 nC @ 10 V | |
| Maximum Gate Voltage | ±25V | |
| Max Input Cap at Vds | 4200 pF @ 50 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 255W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | Automotive | |
| Certification Qualification | AEC-Q101 | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-247-3 | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 35A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 120 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 120 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 4200 pF @ 50 V at Vds for safeguarding the device. The input capacitance is rated at 4200 pF @ 50 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3 ensuring device integrity. Highest power dissipation 255W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 120 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 88mOhm @ 17.5A, 10V for MOSFET criteria. Product or component classification series FDmesh™ II. Manufacturer package type TO-247-3 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±25V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.
