Stock: 1
Distributor: 130
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 57.06 | ₹ 57.06 |
| 25 | ₹ 41.92 | ₹ 1,048.00 |
| 100 | ₹ 33.77 | ₹ 3,377.00 |
| 250 | ₹ 28.65 | ₹ 7,162.50 |
| 500 | ₹ 24.57 | ₹ 12,285.00 |
| 1000 | ₹ 21.54 | ₹ 21,540.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 40V | |
| Drain-Source Breakdown Volts | 40V | |
| Drain Current at Vds | 2mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 3V @ 1µA | |
| Maximum Power Handling | 300mW | |
| Input Cap at Vds | 6pF @ 10V (VGS) | |
| RDS On Resistance | 100 Ohm | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 2mA @ 15V. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 6pF @ 10V (VGS) at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Resistance in the on-state 100 Ohm for efficient conduction. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 300mW for device protection. Peak Rds(on) at Id 3V @ 1µA for MOSFET efficiency. RDS(on) resistance value 100 Ohm for MOSFET operation. V(BR)GSS breakdown level 40V for semiconductors. Cutoff voltage VGS off at Id 3V @ 1µA for MOSFETs.