PMBFJ110,215
Data Sheet
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 25V | |
| Drain-Source Breakdown Volts | 25V | |
| Drain Current at Vds | 10mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 4V @ 1µA | |
| Maximum Power Handling | 250mW | |
| Input Cap at Vds | 30pF @ 10V (VGS) | |
| RDS On Resistance | 18 Ohm | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 10mA @ 15V. Supports Vdss drain-to-source voltage rated at 25V. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 30pF @ 10V (VGS) at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Resistance in the on-state 18 Ohm for efficient conduction. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 250mW for device protection. Peak Rds(on) at Id 4V @ 1µA for MOSFET efficiency. RDS(on) resistance value 18 Ohm for MOSFET operation. V(BR)GSS breakdown level 25V for semiconductors. Cutoff voltage VGS off at Id 4V @ 1µA for MOSFETs.