BUK9509-75A,127

BUK9509-75A,127
Attribute
Description
Manufacturer Part Number
BUK9509-75A,127
Manufacturer
Description
Other semiconductors
Note : GST will not be applied to orders shipping outside of India

Stock:
4084

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
10000 ₹ 135.28 ₹ 13,52,800.00
1000 ₹ 144.18 ₹ 1,44,180.00
500 ₹ 152.19 ₹ 76,095.00
100 ₹ 161.09 ₹ 16,109.00
25 ₹ 169.10 ₹ 4,227.50

Stock:
4000

Distributor: 111

Lead Time: Not specified


Quantity Unit Price Ext. Price
10000 ₹ 169.10 ₹ 16,91,000.00
1000 ₹ 180.22 ₹ 1,80,220.00
500 ₹ 190.24 ₹ 95,120.00
166 ₹ 201.36 ₹ 33,425.76

Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 75V
Continuous Drain Current at 25C 75A
Max On-State Resistance 8.5 mOhm @ 25A, 10V
Max Threshold Gate Voltage 2V @ 1mA
Gate Charge at Vgs -
Input Cap at Vds 8840pF @ 25V
Maximum Power Handling 230W
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 75A at 25°C. Supports Vdss drain-to-source voltage rated at 75V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 8840pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 230W for device protection. Peak Rds(on) at Id and Vgs 8.5 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 1mA for MOSFET threshold level.

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