Stock: 1562
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 126.38 | ₹ 12,63,800.00 |
| 1000 | ₹ 134.39 | ₹ 1,34,390.00 |
| 500 | ₹ 142.40 | ₹ 71,200.00 |
| 100 | ₹ 150.41 | ₹ 15,041.00 |
| 25 | ₹ 158.42 | ₹ 3,960.50 |
Stock: 1562
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 140.62 | ₹ 14,06,200.00 |
| 1000 | ₹ 149.52 | ₹ 1,49,520.00 |
| 500 | ₹ 158.42 | ₹ 79,210.00 |
| 100 | ₹ 167.32 | ₹ 16,732.00 |
| 25 | ₹ 176.22 | ₹ 4,405.50 |
Stock: 639
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 175.78 | ₹ 17,57,800.00 |
| 1000 | ₹ 186.90 | ₹ 1,86,900.00 |
| 500 | ₹ 198.03 | ₹ 99,015.00 |
| 160 | ₹ 209.15 | ₹ 33,464.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 110V | |
| Continuous Drain Current at 25C | 75A (Tc) | |
| Max On-State Resistance | 15 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 90nC @ 10V | |
| Input Cap at Vds | 4900pF @ 25V | |
| Maximum Power Handling | 300W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 75A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 110V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 90nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4900pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 300W for device protection. Peak Rds(on) at Id 90nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 15 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
