Stock: 200
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 111 | ₹ 113.39 | ₹ 12,586.29 |
| 34 | ₹ 121.48 | ₹ 4,130.32 |
| 1 | ₹ 323.96 | ₹ 323.96 |
Stock: 542
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 218.94 | ₹ 21,89,400.00 |
| 1000 | ₹ 233.18 | ₹ 2,33,180.00 |
| 500 | ₹ 246.53 | ₹ 1,23,265.00 |
| 100 | ₹ 260.77 | ₹ 26,077.00 |
| 25 | ₹ 274.12 | ₹ 6,853.00 |
Stock: 542
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 273.68 | ₹ 27,36,800.00 |
| 1000 | ₹ 291.47 | ₹ 2,91,470.00 |
| 500 | ₹ 308.16 | ₹ 1,54,080.00 |
| 103 | ₹ 325.96 | ₹ 33,573.88 |
| 98 | ₹ 342.65 | ₹ 33,579.70 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 75V | |
| Continuous Drain Current at 25C | 100A | |
| Max On-State Resistance | 4.3 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 142nC @ 10V | |
| Input Cap at Vds | 11659pF @ 25V | |
| Maximum Power Handling | 333W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100A at 25°C. Supports Vdss drain-to-source voltage rated at 75V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 142nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 11659pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-262-3 Long Leads, I²Pak, TO-262AA providing mechanical and thermal shielding. Peak power 333W for device protection. Peak Rds(on) at Id 142nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.3 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
