Stock: 2000
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 121.93 | ₹ 12,19,300.00 |
| 1000 | ₹ 129.05 | ₹ 1,29,050.00 |
| 500 | ₹ 137.06 | ₹ 68,530.00 |
| 100 | ₹ 144.18 | ₹ 14,418.00 |
| 25 | ₹ 152.19 | ₹ 3,804.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 120A | |
| Max On-State Resistance | 2.3 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 1mA | |
| Gate Charge at Vgs | 260nC @ 10V | |
| Input Cap at Vds | 15100pF @ 25V | |
| Maximum Power Handling | 306W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 120A at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 260nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 15100pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-262-3 Long Leads, I²Pak, TO-262AA providing mechanical and thermal shielding. Peak power 306W for device protection. Peak Rds(on) at Id 260nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.3 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 1mA for MOSFET threshold level.
