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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 350mA | |
| Max On-State Resistance | 1.6 Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 2.4V @ 250µA | |
| Gate Charge at Vgs | 0.8nC @ 4.5V | |
| Input Cap at Vds | 50pF @ 10V | |
| Maximum Power Handling | 330mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-563, SOT-666 |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Supports a continuous drain current (Id) of 350mA at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as 2 N-Channel (Dual). Upholds 0.8nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 50pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-563, SOT-666 providing mechanical and thermal shielding. Peak power 330mW for device protection. Peak Rds(on) at Id 0.8nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.6 Ohm @ 500mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.4V @ 250µA for MOSFET threshold level.
