Stock: 7
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 25 | ₹ 634.15 | ₹ 15,853.75 |
| 19 | ₹ 660.29 | ₹ 12,545.51 |
| 14 | ₹ 680.75 | ₹ 9,530.50 |
| 7 | ₹ 706.32 | ₹ 4,944.24 |
| 1 | ₹ 727.34 | ₹ 727.34 |
Stock: 1665
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 768.96 | ₹ 768.96 |
| 10 | ₹ 450.34 | ₹ 4,503.40 |
| 100 | ₹ 365.79 | ₹ 36,579.00 |
| 480 | ₹ 351.55 | ₹ 1,68,744.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 560V | |
| Continuous Drain Current at 25C | 32A (Tc) | |
| Max On-State Resistance | 110 mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 3.9V @ 1.8mA | |
| Gate Charge at Vgs | 170nC @ 10V | |
| Input Cap at Vds | 4200pF @ 25V | |
| Maximum Power Handling | 284W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 32A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 560V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 170nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4200pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 284W for device protection. Peak Rds(on) at Id 170nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 110 mOhm @ 20A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.9V @ 1.8mA for MOSFET threshold level.
