Stock: 340
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 509.97 | ₹ 509.97 |
| 10 | ₹ 428.09 | ₹ 4,280.90 |
| 100 | ₹ 346.21 | ₹ 34,621.00 |
| 240 | ₹ 258.99 | ₹ 62,157.60 |
| 480 | ₹ 252.76 | ₹ 1,21,324.80 |
Stock: 5
Distributor: 125
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 1,335.00 | ₹ 13,35,000.00 |
| 100 | ₹ 1,540.59 | ₹ 1,54,059.00 |
| 1 | ₹ 2,054.12 | ₹ 2,054.12 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 21.7A (Tc) | |
| Max On-State Resistance | 185 mOhm @ 15.4A, 10V | |
| Max Threshold Gate Voltage | 5V @ 1.2mA | |
| Gate Charge at Vgs | 143nC @ 10V | |
| Input Cap at Vds | 3160pF @ 25V | |
| Maximum Power Handling | 240W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 21.7A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 143nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 3160pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 240W for device protection. Peak Rds(on) at Id 143nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 185 mOhm @ 15.4A, 10V for MOSFET criteria. Peak Vgs(th) at Id 5V @ 1.2mA for MOSFET threshold level.
