SPP15N60C3
Data Sheet
Stock: 87
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 330 | ₹ 80.91 | ₹ 26,700.30 |
| 250 | ₹ 90.25 | ₹ 22,562.50 |
| 195 | ₹ 93.36 | ₹ 18,205.20 |
| 140 | ₹ 96.47 | ₹ 13,505.80 |
| 90 | ₹ 99.58 | ₹ 8,962.20 |
| 40 | ₹ 121.36 | ₹ 4,854.40 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 15A (Tc) | |
| Max On-State Resistance | 280 mOhm @ 9.4A, 10V | |
| Max Threshold Gate Voltage | 3.9V @ 675µA | |
| Gate Charge at Vgs | 63nC @ 10V | |
| Input Cap at Vds | 1660pF @ 25V | |
| Maximum Power Handling | 156W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 15A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 63nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1660pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 156W for device protection. Peak Rds(on) at Id 63nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 280 mOhm @ 9.4A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.9V @ 675µA for MOSFET threshold level.
