Stock: 20
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2000 | ₹ 51.66 | ₹ 1,03,320.00 |
| 1600 | ₹ 62.62 | ₹ 1,00,192.00 |
| 1200 | ₹ 73.68 | ₹ 88,416.00 |
| 150 | ₹ 84.58 | ₹ 12,687.00 |
| 10 | ₹ 95.53 | ₹ 955.30 |
Stock: 2199
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 163.11 | ₹ 1,63,110.00 |
| 500 | ₹ 167.20 | ₹ 83,600.00 |
| 250 | ₹ 171.87 | ₹ 42,967.50 |
| 100 | ₹ 177.25 | ₹ 17,725.00 |
| 50 | ₹ 183.47 | ₹ 9,173.50 |
| 36 | ₹ 190.74 | ₹ 6,866.64 |
Stock: 15271
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 171.77 | ₹ 171.77 |
| 10 | ₹ 55.18 | ₹ 551.80 |
| 100 | ₹ 55.09 | ₹ 5,509.00 |
| 2500 | ₹ 46.81 | ₹ 1,17,025.00 |
| 5000 | ₹ 46.73 | ₹ 2,33,650.00 |
| 10000 | ₹ 46.64 | ₹ 4,66,400.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 30A | |
| Max On-State Resistance | 75 mOhm @ 21.5A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1.7mA | |
| Gate Charge at Vgs | 48nC @ 10V | |
| Input Cap at Vds | 1535pF @ 25V | |
| Maximum Power Handling | 125W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 30A at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 48nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1535pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Peak power 125W for device protection. Peak Rds(on) at Id 48nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 75 mOhm @ 21.5A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1.7mA for MOSFET threshold level.
