STD3NK80ZT4

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 2.5A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 800 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 19 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 19 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 485 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 485 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Enclosure type DPAK ensuring device integrity. Highest power dissipation 70W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 19 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.5Ohm @ 1.25A, 10V for MOSFET criteria. Product or component classification series SuperMESH™. Manufacturer package type DPAK for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4.5V @ 50µA for MOSFET threshold level.