Description

Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 20A at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Provides FET characteristics categorized as Logic Level Gate. Guarantees maximum 20nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 20nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1430pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 1430pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerVDFN providing mechanical and thermal shielding. Enclosure type PG-TDSON-8-4 ensuring device integrity. Peak power 33W for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 20nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 26mOhm @ 17A, 10V for MOSFET criteria. Product or component classification series OptiMOS™. Manufacturer package type PG-TDSON-8-4 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 2.2V @ 10µA for MOSFET threshold level.