IPD90R1K2C3
Data Sheet
Stock: 28507
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 635 | ₹ 42.11 | ₹ 26,739.85 |
| 510 | ₹ 43.86 | ₹ 22,368.60 |
| 395 | ₹ 45.61 | ₹ 18,015.95 |
| 275 | ₹ 49.12 | ₹ 13,508.00 |
| 175 | ₹ 50.87 | ₹ 8,902.25 |
| 85 | ₹ 54.38 | ₹ 4,622.30 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 900V | |
| Continuous Drain Current at 25C | 5.1A | |
| Max On-State Resistance | 1.2 Ohm @ 2.8A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 310µA | |
| Gate Charge at Vgs | 28nC @ 10V | |
| Input Cap at Vds | 710pF @ 100V | |
| Maximum Power Handling | 83W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 5.1A at 25°C. Supports Vdss drain-to-source voltage rated at 900V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 28nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 710pF @ 100V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Peak power 83W for device protection. Peak Rds(on) at Id 28nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.2 Ohm @ 2.8A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 310µA for MOSFET threshold level.
