Description

Provided in a setup characterized as 2 N-Channel (Half Bridge). Supports a continuous drain current (Id) of 60A (Tj) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Guarantees maximum 30nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 30nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 1922pF @ 25V at Vds for safeguarding the device. The input capacitance is rated at 1922pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerVDFN providing mechanical and thermal shielding. Enclosure type PG-TDSON-8-56 ensuring device integrity. Peak power 75W (Tc) for device protection. Product condition Active for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 30nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.1mOhm @ 30A, 10V for MOSFET criteria. Product or component classification series OptiMOS™ 6. Manufacturer package type PG-TDSON-8-56 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 3V @ 25µA for MOSFET threshold level.