BSS308PE H6327

BSS308PE H6327
Attribute
Description
Manufacturer Part Number
BSS308PE H6327
Description
MOSFET P-CH 30V 2.0A SOT23
Note : GST will not be applied to orders shipping outside of India

Stock:
390000

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
7110 ₹ 3.76 ₹ 26,733.60
5320 ₹ 4.18 ₹ 22,237.60
4110 ₹ 4.33 ₹ 17,796.30
2985 ₹ 4.48 ₹ 13,372.80
1930 ₹ 4.62 ₹ 8,916.60
795 ₹ 5.62 ₹ 4,467.90

Stock:
59

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 40.05 ₹ 40.05
10 ₹ 28.30 ₹ 283.00
100 ₹ 17.62 ₹ 1,762.00
500 ₹ 12.19 ₹ 6,095.00
1000 ₹ 10.50 ₹ 10,500.00
3000 ₹ 8.81 ₹ 26,430.00
6000 ₹ 7.83 ₹ 46,980.00
9000 ₹ 7.21 ₹ 64,890.00
24000 ₹ 6.32 ₹ 1,51,680.00

Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET P-Channel, Metal Oxide
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 2A (Ta)
Max On-State Resistance 80 mOhm @ 2A, 10V
Max Threshold Gate Voltage 1V @ 11µA
Gate Charge at Vgs 5nC @ 10V
Input Cap at Vds 500pF @ 15V
Maximum Power Handling 500mW
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 2A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 5nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 500pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 500mW for device protection. Peak Rds(on) at Id 5nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 80 mOhm @ 2A, 10V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 11µA for MOSFET threshold level.

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