PMV65UN,215

PMV65UN,215
Attribute
Description
Manufacturer Part Number
PMV65UN,215
Manufacturer
Description
MOSFET N-CH 20V 2.2A TO236AB
Note : GST will not be applied to orders shipping outside of India

Stock:
2063

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 9.13 ₹ 9,13,000.00
10000 ₹ 10.90 ₹ 1,09,000.00
1000 ₹ 12.23 ₹ 12,230.00
500 ₹ 13.26 ₹ 6,630.00
100 ₹ 14.73 ₹ 1,473.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 2.2A (Ta)
Gate Drive Voltage Range 1.8V, 4.5V
Max On-State Resistance 76mOhm @ 2A, 4.5V
Max Threshold Gate Voltage 1V @ 250µA
Max Gate Charge at Vgs 3.9 nC @ 4.5 V
Maximum Gate Voltage ±8V
Max Input Cap at Vds 183 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 310mW (Ta), 2.17W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-23 (TO-236AB)
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 2.2A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20 V. Accommodates drive voltage specified at 1.8V, 4.5V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 3.9 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 3.9 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 183 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 183 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23 (TO-236AB) ensuring device integrity. Highest power dissipation 310mW (Ta), 2.17W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 3.9 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 76mOhm @ 2A, 4.5V for MOSFET criteria. Manufacturer package type SOT-23 (TO-236AB) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±8V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.

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