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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | eGaN® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Setup Arrangement | 2 N-Channel (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 1.7A | |
| Max On-State Resistance | 70mOhm @ 2A, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 600µA | |
| Max Gate Charge at Vgs | 0.73nC @ 5V | |
| Max Input Cap at Vds | 75pF @ 50V | |
| Maximum Power Handling | - | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Die | |
| Vendor Package Type | Die |
Description
Provided in a setup characterized as 2 N-Channel (Half Bridge). Supports a continuous drain current (Id) of 1.7A at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Guarantees maximum 0.73nC @ 5V gate charge at Vgs for enhanced switching efficiency. Upholds 0.73nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 75pF @ 50V at Vds for safeguarding the device. The input capacitance is rated at 75pF @ 50V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case Die providing mechanical and thermal shielding. Enclosure type Die ensuring device integrity. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 0.73nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 70mOhm @ 2A, 5V for MOSFET criteria. Product or component classification series eGaN®. Manufacturer package type Die for component choice. Platform technology GaNFET (Gallium Nitride) for the type of product. Peak Vgs(th) at Id 2.5V @ 600µA for MOSFET threshold level.
