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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 500mA (Ta) | |
| Max On-State Resistance | 400mOhm @ 500mA, 4.5V | |
| Max Threshold Gate Voltage | 900mV @ 250µA | |
| Max Gate Charge at Vgs | 1.4nC @ 4.5V | |
| Max Input Cap at Vds | 67pF @ 10V | |
| Maximum Power Handling | 350mW (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSSOP, SC-88, SOT-363 | |
| Vendor Package Type | SOT-363 |
Description
Provided in a setup characterized as 2 N-Channel (Dual). Supports a continuous drain current (Id) of 500mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 20V. Guarantees maximum 1.4nC @ 4.5V gate charge at Vgs for enhanced switching efficiency. Upholds 1.4nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 67pF @ 10V at Vds for safeguarding the device. The input capacitance is rated at 67pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 6-TSSOP, SC-88, SOT-363 providing mechanical and thermal shielding. Enclosure type SOT-363 ensuring device integrity. Peak power 350mW (Ta) for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 1.4nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 400mOhm @ 500mA, 4.5V for MOSFET criteria. Manufacturer package type SOT-363 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 900mV @ 250µA for MOSFET threshold level.
