BS250FTA
Data Sheet
Attribute
Description
Note :
GST will not be applied to orders shipping outside of India
Stock: 100
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 12.94 | ₹ 1,294.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 45V | |
| Continuous Drain Current at 25C | 90mA (Ta) | |
| Max On-State Resistance | 14 Ohm @ 200mA, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 25pF @ 10V | |
| Maximum Power Handling | 330mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 90mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 45V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. The input capacitance is rated at 25pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 330mW for device protection. Peak Rds(on) at Id and Vgs 14 Ohm @ 200mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 1mA for MOSFET threshold level.
