AONY36352

AONY36352
Attribute
Description
Manufacturer Part Number
AONY36352
Description
MOSFET 2N-CH 30V 18.5A 8DFN
Note : GST will not be applied to orders shipping outside of India

Stock:
30000

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
875 ₹ 30.52 ₹ 26,705.00
705 ₹ 31.78 ₹ 22,404.90
540 ₹ 33.05 ₹ 17,847.00
375 ₹ 35.60 ₹ 13,350.00
245 ₹ 36.87 ₹ 9,033.15
115 ₹ 39.41 ₹ 4,532.15

Stock:
17972

Distributor: 117

Lead Time: Not specified


Quantity Unit Price Ext. Price
9000 ₹ 40.05 ₹ 3,60,450.00
6000 ₹ 40.34 ₹ 2,42,040.00
3000 ₹ 43.27 ₹ 1,29,810.00
1000 ₹ 49.09 ₹ 49,090.00
500 ₹ 53.68 ₹ 26,840.00
100 ₹ 67.92 ₹ 6,792.00
10 ₹ 101.19 ₹ 1,011.90
1 ₹ 159.31 ₹ 159.31

Stock:
2600

Distributor: 11

Lead Time: Not specified


Quantity Unit Price Ext. Price
500 ₹ 55.00 ₹ 27,500.00
100 ₹ 58.92 ₹ 5,892.00
10 ₹ 65.59 ₹ 655.90
3 ₹ 74.14 ₹ 222.42
1 ₹ 85.44 ₹ 85.44

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Asymmetrical
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Max On-State Resistance 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Max Threshold Gate Voltage 2.1V @ 250µA, 1.9V @ 250µA
Max Gate Charge at Vgs 20nC @ 10V, 52nC @ 10V
Max Input Cap at Vds 820pF @ 15V, 2555pF @ 15V
Maximum Power Handling 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerSMD, Flat Leads
Vendor Package Type 8-DFN (5x6)

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Provided in a setup characterized as 2 N-Channel (Dual) Asymmetrical. Supports a continuous drain current (Id) of 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Guarantees maximum 20nC @ 10V, 52nC @ 10V gate charge at Vgs for enhanced switching efficiency. Upholds 20nC @ 10V, 52nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 820pF @ 15V, 2555pF @ 15V at Vds for safeguarding the device. The input capacitance is rated at 820pF @ 15V, 2555pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-PowerSMD, Flat Leads providing mechanical and thermal shielding. Enclosure type 8-DFN (5x6) ensuring device integrity. Peak power 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 20nC @ 10V, 52nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V for MOSFET criteria. Manufacturer package type 8-DFN (5x6) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs(th) at Id 2.1V @ 250µA, 1.9V @ 250µA for MOSFET threshold level.

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