Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 3.1A, 2.7A | |
| Max On-State Resistance | 75 mOhm @ 3.1A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Gate Charge at Vgs | 8.5nC @ 10V | |
| Input Cap at Vds | 240pF @ 15V | |
| Maximum Power Handling | 1.15W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-74, SOT-457 |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 3.1A, 2.7A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as N and P-Channel. Upholds 8.5nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 240pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case SC-74, SOT-457 providing mechanical and thermal shielding. Peak power 1.15W for device protection. Peak Rds(on) at Id 8.5nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 75 mOhm @ 3.1A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.
