ALD212900APAL

ALD212900APAL
Attribute
Description
Manufacturer Part Number
ALD212900APAL
Description
MOSFET 2N-CH 10.6V 0.08A 8PDIP
Note : GST will not be applied to orders shipping outside of India

Stock:
500

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
500 ₹ 384.93 ₹ 1,92,465.00
100 ₹ 432.35 ₹ 43,235.00
50 ₹ 468.96 ₹ 23,448.00
1 ₹ 849.06 ₹ 849.06

Stock:
19

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 866.86 ₹ 866.86
10 ₹ 563.37 ₹ 5,633.70
100 ₹ 431.65 ₹ 43,165.00
500 ₹ 384.48 ₹ 1,92,240.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line EPAD®, Zero Threshold™
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Matched Pair
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C 80mA
Max On-State Resistance 14Ohm
Max Threshold Gate Voltage 10mV @ 20µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 30pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 8-DIP (0.300", 7.62mm)
Vendor Package Type 8-PDIP

Description

Provided in a setup characterized as 2 N-Channel (Dual) Matched Pair. Supports a continuous drain current (Id) of 80mA at 25°C. Supports Vdss drain-to-source voltage rated at 10.6V. Provides FET characteristics categorized as Logic Level Gate. The highest input capacitance is 30pF @ 5V at Vds for safeguarding the device. The input capacitance is rated at 30pF @ 5V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 0°C ~ 70°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 8-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Enclosure type 8-PDIP ensuring device integrity. Peak power 500mW for device protection. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 14Ohm for MOSFET criteria. Product or component classification series EPAD®, Zero Threshold™. Manufacturer package type 8-PDIP for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs(th) at Id 10mV @ 20µA for MOSFET threshold level.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.