Attribute
Description
Manufacturer Part Number
GB01SLT06-214
Manufacturer
Description
SIC SCHOTTKY DIODE 650V 1A
Manufacturer Lead Time
10 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) | 650V | |
| Average DC Output Current | 1A (DC) | |
| Forward Voltage (Vf) | 2V @ 1A | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Reverse Leakage Current @ Vr | 10µA @ 6.5V | |
| Capacitance at Voltage and Frequency | 76pF @ 1V, 1MHz | |
| Heat Dissipation Resistance | 3.55°C/W Jc | |
| Junction Temp Range | -55°C ~ 175°C | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 2V @ 1A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 76pF @ 1V, 1MHz. Delivers average rectified current (Io) recorded at 1A (DC). Includes diode type indicated as Silicon Carbide Schottky. Resistance in the on-state 3.55°C/W Jc for efficient conduction. Junction operating temperature -55°C ~ 175°C for component protection. Reverse recovery duration 0ns for switching diodes. Velocity No Recovery Time > 500mA (Io) for mechanical or data efficiency. Thermal resistance value 3.55°C/W Jc for temperature regulation. Peak Vce(on) at Vge Silicon Carbide Schottky for transistor parameters.
