GAP3SLT33-214
Data Sheet
Attribute
Description
Manufacturer Part Number
GAP3SLT33-214
Manufacturer
Description
SIC SCHOTTKY DIODE 3330V .3A
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 121
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 903.79 | ₹ 903.79 |
| 5 | ₹ 848.80 | ₹ 4,244.00 |
| 10 | ₹ 793.81 | ₹ 7,938.10 |
| 50 | ₹ 772.02 | ₹ 38,601.00 |
| 100 | ₹ 750.23 | ₹ 75,023.00 |
| 250 | ₹ 722.75 | ₹ 1,80,687.50 |
Stock: 1
Distributor: 130
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 957.52 | ₹ 957.52 |
| 5 | ₹ 899.18 | ₹ 4,495.90 |
| 10 | ₹ 840.83 | ₹ 8,408.30 |
| 50 | ₹ 817.68 | ₹ 40,884.00 |
| 100 | ₹ 794.51 | ₹ 79,451.00 |
| 250 | ₹ 765.12 | ₹ 1,91,280.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) | 3300V (3.3kV) | |
| Average DC Output Current | 300mA (DC) | |
| Forward Voltage (Vf) | 2.2V @ 300mA | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Reverse Leakage Current @ Vr | 10µA @ 3300V | |
| Capacitance at Voltage and Frequency | 42pF @ 1V, 1MHz | |
| Heat Dissipation Resistance | 1.42°C/W Jc | |
| Junction Temp Range | -55°C ~ 175°C | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 2.2V @ 300mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 42pF @ 1V, 1MHz. Delivers average rectified current (Io) recorded at 300mA (DC). Includes diode type indicated as Silicon Carbide Schottky. Resistance in the on-state 1.42°C/W Jc for efficient conduction. Junction operating temperature -55°C ~ 175°C for component protection. Reverse recovery duration 0ns for switching diodes. Velocity No Recovery Time > 500mA (Io) for mechanical or data efficiency. Thermal resistance value 1.42°C/W Jc for temperature regulation. Peak Vce(on) at Vge Silicon Carbide Schottky for transistor parameters.
