820mW,Power - Max
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP1096UCB4-7 DIODES INC
MOSFET P-Channel, Metal Oxide 12V 2.6A (Ta) 102 mOhm @ 500mA, 4.5V 1V @ 250µA 3.7nC @ 4.5V 251pF @ 6V 820mW Surface Mount 4-UFBGA, CSPBGA
DMP1080UCB4-7 DIODES INC
MOSFET P-Channel, Metal Oxide 12V 3.3A (Ta) 80 mOhm @ 500mA, 4.5V 1V @ 250µA 5nC @ 4.5V 350pF @ 6V 820mW Surface Mount 4-UFBGA, CSPBGA
PMT21EN,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 7.4A (Ta) 21 mOhm @ 7.4A, 10V 2.5V @ 250µA 14.4nC @ 15V 588pF @ 15V 820mW - -
PMT29EN,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 820mW Surface Mount TO-261-4, TO-261AA
PMT21EN,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 7.4A (Ta) 21 mOhm @ 7.4A, 10V 2.5V @ 250µA 14.4nC @ 10V 588pF @ 15V 820mW Surface Mount TO-261-4, TO-261AA
PMT29EN,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 6A (Ta) 29 mOhm @ 6A, 10V 2.5V @ 250µA 11nC @ 10V 492pF @ 15V 820mW Surface Mount TO-261-4, TO-261AA
NTMS4920NR2G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 10.6A (Ta) 4.3 mOhm @ 7.5A, 10V 3V @ 250µA 58.9nC @ 10V 4068pF @ 25V 820mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTMS4872NR2G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 6A (Ta), 10.2A (Tc) 13.5 mOhm @ 10.2A, 10V 2.5V @ 250µA 15nC @ 4.5V 1700pF @ 15V 820mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTR3161NT1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 20V - 50 mOhm @ 3.3A, 4.5V 1V @ 250µA 7.3nC @ 4.5V 540pF @ 10V 820mW Surface Mount TO-236-3, SC-59, SOT-23-3