FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
Rds On (Max) @ Id, Vgs | 102 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 3.7nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 251pF @ 6V |
Power - Max | 820mW |
Mounting Type | Surface Mount |
Package / Case | 4-UFBGA, CSPBGA |