Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Rds On (Max) @ Id, Vgs 102 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 3.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 251pF @ 6V
Power - Max 820mW
Mounting Type Surface Mount
Package / Case 4-UFBGA, CSPBGA
Buying Option 1
1
-
INR 262.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 262.3