MOSFET P-Channel, Metal Oxide,FET Type
1.8W,Power - Max
49 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP6250SE-13 DIODES INC
MOSFET P-Channel, Metal Oxide 60V 2.1A (Ta) 250 mOhm @ 1A, 10V 3V @ 250µA 9.7nC @ 10V 551pF @ 30V 1.8W Surface Mount TO-261-4, TO-261AA
DMP3050LVT-7 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 4.5A (Ta) 50 mOhm @ 4.5A, 10V 2V @ 250µA 10.5nC @ 10V 620pF @ 15V 1.8W Surface Mount SOT-23-6
AON1611 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 20V 4A (Ta) 58 mOhm @ 4A, 4.5V 900mV @ 250µA 10nC @ 4.5V 550pF @ 10V 1.8W Surface Mount 6-UFDFN
FDZ204P FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 4.5A (Ta) 45 mOhm @ 4.5A, 4.5V 1.5V @ 250µA 13nC @ 4.5V 884pF @ 10V 1.8W Surface Mount 9-WFBGA
BSP315P-E6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.17A (Ta) 800 mOhm @ 1.17A, 10V 2V @ 160µA 7.8nC @ 10V 160pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP170PE6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 4V @ 250µA 14nC @ 10V 410pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP171PE6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 2V @ 460µA 20nC @ 10V 460pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP316PE6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 100V 680mA (Ta) 1.8 Ohm @ 680mA, 10V 2V @ 170µA 6.4nC @ 10V 146pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP317PE6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 250V 430mA (Ta) 4 Ohm @ 430mA, 10V 2V @ 370µA 15.1nC @ 10V 262pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP170PE6327T INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 4V @ 250µA 14nC @ 10V 410pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA