| FET Type | MOSFET P-Channel, Metal Oxide |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 9.7nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 551pF @ 30V |
| Power - Max | 1.8W |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
© 2016 Copyright
