5.6nC @ 4.5V,Gate Charge (Qg) @ Vgs
1.5W,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
MCH6320-TL-E ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 12V 3.5A 70 mOhm @ 1.5A, 4.5V 1.4V @ 1mA 5.6nC @ 4.5V 405pF @ 6V 1.5W Surface Mount 6-SMD, Flat Leads
CSD25201W15 TEXAS INSTRUMENTS INC
MOSFET P-Channel, Metal Oxide 20V 4A (Ta) 40 mOhm @ 2A, 4.5V 1.1V @ 250µA 5.6nC @ 4.5V 510pF @ 10V 1.5W Surface Mount 9-UFBGA, DSBGA