MOSFET, P CH, 20V, 4A, 9DSBGA; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:1.5W; Transistor Case Style:DSBGA; No. of Pins:9; Operating
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 40 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) @ Vgs 5.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 510pF @ 10V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 9-UFBGA, DSBGA