20V,Drain to Source Voltage (Vdss)
1.35W,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ZXMN2F34MATA DIODES INC
MOSFET N-Channel, Metal Oxide 20V 4A (Ta) 60 mOhm @ 2.5A, 4.5V 1.5V @ 250µA 2.8nC @ 4.5V 277pF @ 10V 1.35W Surface Mount 3-VDFN Exposed Pad
SI4403BDY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 7.3A (Ta) 17 mOhm @ 9.9A, 4.5V 1V @ 350µA 50nC @ 5V - 1.35W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4403BDY-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 7.3A (Ta) 17 mOhm @ 9.9A, 4.5V 1V @ 350µA 50nC @ 5V - 1.35W Surface Mount 8-SOIC (0.154", 3.90mm Width)