MOSFET, N, DFN322; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:1.35W; Transistor Case Style:DFN; No. of Pins:3; Operating Temperature Max:
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 60 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 2.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 277pF @ 10V
Power - Max 1.35W
Mounting Type Surface Mount
Package / Case 3-VDFN Exposed Pad